STN442D n channel enhancement mode mosfe t 27.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN442D 2009. v1 description STN442D is used trench technology to provide excell ent rds(on) and gate charge. those devices are suitable for use as load switch o r in pwm applications. pin configuration (d-pak) to-252 to-251 part marking y: year code a: process code feature 60v/20.0a, r ds(on) = 24m? (typ.) @v gs = 10v 60v/20.0a, r ds(on) = 31m? @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability to-252,to-251 package design
STN442D n channel enhancement mode mosfe t 27.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN442D 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage vdss 60 v gate-source voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 27.0 20.0 a pulsed drain current idm 40 a continuous source current (diode conduction) is 22 a power dissipation ta=25 ta=70 pd 50 25 w operation junction temperature tj 175 storgae temperature range tstg -55/175 thermal resistance-junction to ambient rja 62 /w
STN442D n channel enhancement mode mosfe t 27.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN442D 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,id=250ma 60 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1.0 2.5 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =48v,v gs =0v 1 zero gate voltage drain current i dss v ds =48v,v gs =0v t j =55 5 ua drain-source on- resistance r ds(on) v gs =10v,i d =20a v gs =4.5v,i d =20a 30 22 37 28 m? forward transconductance gfs v ds =5v,i d =20a 60 s diode forward voltage v sd i s =1.0a,v gs =0v 0.7 1.0 v dynamic total gate charge q g 30 gate-source charge q gs 10 gate-drain charge q gd v ds =10v,v ds =30v i d 20a 12 nc input capacitance c iss 1080 output capacitance c oss 180 reverse transfercapacitance c rss v ds =20v,vgs=0v f=1mhz 58 pf 20 turn-on time t d(on) tr 25 40 turn-off time t d(off) tf v dd =20v,r l = 4? i d =5.0a,v gen =10v r g =1? 42 ns
STN442D n channel enhancement mode mosfe t 27.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN442D 2009. v1 typical characterictics
STN442D n channel enhancement mode mosfe t 27.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN442D 2009. v1 typical characterictics
STN442D n channel enhancement mode mosfe t 27.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN442D 2009. v1 typical characterictics
STN442D n channel enhancement mode mosfe t 27.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STN442D 2009. v1 t to-252-2l package outline sop-8p
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